An analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs

In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that I
_ds
and V
_th
calculated by 2D current model achieve a better accuracy than Surf model.