Monte Carlo investigation of potential fluctuation in 3D device structure

The motions of particles are calculated in 3D structure to evaluate potential fluctuation. The results of homogeneous and thermal equilibrium systems are in good agreement with theoretical results. In 3D MOSFET, the potential fluctuation extends towards the depletion layer and deviation of the amplitude from theoretical value is observed and ascribed to hot electron energy distribution, so the conventional plasmon scattering model should be modified in non-uniform and non-equilibrium carrier distribution.