Planar, ion implanted, high voltage 6H-SiC P-N junction diodes

Planar, high voltage (800 V) P-N junction diodes have been fabricated for the first time on N-type 6H-SiC by room temperature boron implantation through a pad oxide deposited within windows etched in an LPCVD field oxide. All the diodes showed excellent rectification with leakage currents of less than 10 nA (/spl sim/5/spl times/10/sup -5/ A/cm/sup 2/) until avalanche breakdown. It was found that the breakdown voltage increases with junction depth. The reverse recovery time (t/sub rr/) was measured to be 50 ns for the 800 V diode from which an effective minority carrier life time of 12.5 ns was extracted.<
>