Photovoltaic properties of 0.95-eV p-n InGaAsP homojunction solar cells prepared by liquid-phase epitaxy

High-performance 0.95-eV p-n InGaAsP homojunction solar cells fabricated by liquid-phase epitaxy (LPE) are discussed. The best conversion efficiency obtained from cells with overlying InP filters under one-sun AM1.5 global illumination is 6.5%. The corresponding open-circuit voltage, short-circuit current density, and fill factor are 0.52 V, 18.2 mA/cm/sup 2/, and 76%, respectively. These results suggest that the 0.95-eV InGaAsP solar cell is suitable as a bottom cell for multijunction solar cells built on InP substrates.<
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