SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD

Si
_0.5
Ge
_0.5
/Si quantum cascade structures have been deposited by low-energy plasma-enhanced CVD according to a bound-to-continuum design and characterized by high resolution x-ray diffraction and transmission electron microscopy. Electroluminescence from the active region is peaked around 2.5 THz (~10 meV) and exhibits Stark shift and polarization dependence.