A Novel 4.5$\hbox{F}^{2}$ Capacitorless Semiconductor Memory Device

This letter proposes a novel 4.5F
²
capacitorless dynamic random access memory cell with a floating gate (FG) connected to drain via a gated p-n junction diode. The FG in the proposed memory device is for charge storage and can electrically be charged or discharged by current flowing through a gated p-n junction diode.