Controllable large I-L kink of tunnel injection quantum well lasers

A large kink in I-L characteristics of semiconductor lasers was demonstrated by using a tunnel injection quantum well structure. The output power at the kink condition was changed from 13mW to 1.9mW under a small current change of 0.06I
th
(30 mA) and voltage change of 0.3 V. The peak/valley (P/V) ratio of the output power was high as 6.8. The kink current and the P/V ratio were controllable by the tunneling structure with a mono-layer order thickness.