Evaluation of Si wire waveguide fabricated by parallel plate RIE process using double layered EB resist containing C60

By applying a double layered EB resist containing C
60
, we could form fine vertical shaped rectangular Si wire waveguide on silicon on insurator (SOI) by parallel plate reactive-ion-etching (RIE). The propagation loss of single-mode Si wire waveguide for TE mode was obtained to be 4.5 dB/cm at 1550 nm, which is the lowest value for those fabricated by parallel plate RIE.