Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs

In this paper, we analyze the gate-induced image force barrier lowering in a 45-nm-gate-length ultra-thin-body silicon-on-insulator structure by using 2D full-band self-consistent ensemble Monte Carlo simulation with both tunneling current and thermal emission current. Results show that gate-induced barrier lowering has a very significant influence on the drive current. The influence of gate voltage, Schottky barrier height, spacer and channel doping concentration is also investigated and a theoretical analysis is presented.