High-Program/Erase-Speed SONOS With In Situ Silicon Nanocrystals

In this letter, for the first time, we have successfully fabricated silicon–oxide–nitride–oxide–silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows ($≫\hbox{5.5}\ \hbox{V}$), lower operation voltage, high P/E speed, and longer retention time ( $≫\hbox{10}^{8}\ \hbox{s}$ for 13% charge loss).