Equivalent Single Conductor Modeling of Carbon Nanotube Bundles for Transient Analysis of High-Speed Interconnects

An equivalent single conductor (ESC) model is proposed for the time domain analysis of a CMOS gate driving a high speed interconnect consisting of a single wall carbon nanotube (SWCNT) bundle. The computed responses to a step-input voltage are compared to the ones of a multiconductor transmission line (MTL) model. The results obtained are in very good agreement. The 50% time delay tpd of the nano-interconnect is predicted by means the MTL and ESC model and by applying an analytical formulation. The sensitivity analysis of t
_pd
is carried out with respect to the number of the conductive tubes in the bundle, the length and the terminal equivalent capacitance of the interconnect configuration.