New Insight Into NBTI Transient Behavior Observed From Fast-$G_{M}$ Measurements

Fast-I
_D
V
_G
measurements have become an important tool to examine MOSFET transient degradation. The threshold voltage (
V

_TH
) extracted from fast-I
_D
V
_G
measurements is often used to infer the transient behavior of trapped charges in the gate dielectric and at the interface. In this letter, we show that the peak transconductance (G
_M
) can also be extracted reliably in the microsecond time scale. The transient G
_M
behavior provides additional insights not easily observed from an examination of V
_TH
alone. Specifically, transient
GM
results illustrate that an electron trapping/detrapping transient component contributes to the transient behavior observed in the negative bias temperature instability. This electron trapping component has never been reported.