Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

A high-performance In
_0.53
Ga
_0.47
As n-channel MOSFET integrated with a HfAlO gate dielectric and a TaN gate electrode was fabricated using a self-aligned process. After HCl cleaning and (NH
₄
)
₂
S treatment, the chemical vapor deposition HfAlO growth on In
_0.53
Ga
_0.47
As exhibits a high-quality interface. The fabricated nMOSFET with a HfAlO gate oxide thickness of 11.7 nm shows a gate leakage current density as low as 2.5 times 10
^-7
A/cm
²
at V
_g
of 1 V. Excellent inversion capacitance was illustrated. Silicon implantation was self-aligned to the gate, and low-temperature activation for source and drain was achieved by rapid thermal annealing at 600degC for 1 min. The source and drain junction exhibited an excellent rectifying characteristic and high forward current. The result of an In
_0.53
Ga
_0.47
As nMOSFET shows well-performed I
_d
-V
_d
and I
_d
-V
_g
characteristics. The record high peak electron mobility of 1560 cm
²
/Vs has been achieved without any correction methods considering interface charge and parasitic resistance.