High-speed electrooptic phase modulators using InGaAs/InAlAs multiple quantum well waveguides

High-speed phase modulation of waveguided InGaAs/InAlAs multiple-quantum-well optical modulators operating at 1.55 mu m is described. The modulator requires a low voltage for pi -phase-shift (V/sub pi /=2.5 V) as well as a small intensity modulation depth of 1 dB. The measured electrical 3-dB bandwidth is 10 GHz, giving a bandwidth-to-voltage ratio of 4 GHz/V.<
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