Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source and Drain Stressors With High Carbon Content

Phosphorus
in

situ
doped (Si
_1-y
C
_y
) films (SiC:P) with substitutional carbon concentration of 1.7% and 2.1% were selectively grown in the source and drain regions of double-gate -oriented (110)-sidewall FinFETs to induce tensile strain in the silicon channel.
In

situ
doping removes the need for a high-temperature spike anneal for source/drain (S/D) dopant activation and thus preserves the carbon substitutionality in the SiC:P films as grown. A strain-induced enhancement of 15% and 22% was obtained for n-channel FinFETs with 1.7% and 2.1% carbon incorporated in the S/D, respectively.