4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency

We report a 4H-SiC PIN recessed-window avalanche photodiode with a peak responsitivity of 136 mA/W (external quantum efficiency = 60%) at lambda = 262 nm, corresponding to more than a 50% increase in external quantum efficiency compared to nonrecessed structures. The dark current was 90 pA at a photocurrent gain of 1000. Avalanche gains of over 106, k ~ 0.1, and a spatially uniform response were achieved.