Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire

We present a successful synthesis of single crystalline homogeneous Si
_1-x
Ge
_x
nanowires (diameter:7~52nm) via vapor-liquid-solid mechanism. Results show that quality, density, and growth rate of Si
_1-x
Ge
_x
nanowires are greatly affected by the growth temperature and the single crystalline Si
_1-x
Ge
_x
nanowires without amorphous sheath layer can be obtained at optimized growth temperature. Control of the amount of Ge in nanowire was obtained with different GeH
₄
gas flow rates. Using back-gated field effect transistor integrated with HfO
₂
gate dielectric, TaN/Ta metal gate and Pd source/drain electrode, Si
_1-x
Ge
_x
nanowire transistor exhibits p-MOS operation with I
_on
/I
_off
~10
⁴
, sub-threshold swing of 97 mV/dec.