Advanced DSS MOSFET technology for ultrahigh performance applications

Dopant segregated Schottky MOSFET (DSS FET) is one of the key technologies which can improve the MOSFET performance thanks to reduction of external resistance and increase of carrier injection velocity. We have found that both laser spike annealing (LSA) and fluorine co-implant can reduce external resistance furthermore, which leads to boost drive currents of DSS FETs by 7% respectively. By optimizing these technologies, high drive currents of 1310 muA/mum and 1080 muA/mum at Ioff of 100 nA/mum are achieved at 1.0 V and 0.9 V respectively, without use of high-k/metal gate.