Degradation of metal-induced laterally crystallized n-type poly-Si thin-film transistors under dynamic voltage stress

Degradation of metal-induced laterally crystallized n-type poly-Si TFTs is systematically investigated under synchronized V
_g
and V
_d
stresses. In low frequencies, degradation independent of frequency is the same as that in DC self-heating stress, while in high frequencies, frequency dependent degradation is attributed to an additional mechanism associated with pulse rising/falling edges.