The Homoepitaxy GaAs on (001)-β(2×4) surface

This study aims to analyze the mechanism of 2D growth of crystals via the homoepitaxial growth of GaAs on the (001)-beta(2times4) surface by molecular beam epitaxy. The behavior of the full diffraction pattern from RHEED which indicates layer-by-layer growth is analyzed. The equation of state of the growing surface is derived in the context of the mean field theory. Results show that the homoepitaxy of GaAs is considered as a 2D first-order phase transition.