Low dielectric constant and hydrophobic nanoporous silica films

A novel route to prepare low-dielectric constant mesoporous SiO
₂
films is reported in this paper. Silicate sols are prepared with the precursor TEOS and template CTAB catalyzed by hydrochloric acid. The films are prepared by dip-coating process. FTIIR, XRD and AFM are used to characterize the films. The dielectric constants are measured by impedance analysis apparatus. The films with dielectric constants smaller than 2.2 can be acquired by adjusting the concentration of CTAB and aging time.