Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in $\hbox{p}^{+}$-$\hbox{n}^{-}$ - $\hbox{n}^{+}$ Diodes

This brief describes the influence of switching conditions and a dynamic avalanche on the extraction of the charge-carrier plasma during the reverse-recovery period of p
⁺
-n
^-
-n
⁺
diodes. The influence of the drift components and the diffusion components of the electron- and hole-current densities on the evolution of the plasma layer was investigated. The analysis shows that diffusion currents influence the plasma extraction process and can induce a change in the direction of the particle flux. Such a change in the particle flux may result in a longitudinal displacement of the plasma layer and significantly modify the reverse-recovery behavior. The results explain how a low on -state current density, a high circuit inductance, and the appearance of a dynamic avalanche will modify the reverse-recovery behavior.