I-V and Gain Characteristics of Electrowetting-Based Liquid Field Effect Transistor

This work presents an electrowetting-based liquid state field effect transistor (liquiFET) consisting of glass substrate, an Al
₂
O
₃
-covered transparent ground electrode (ITO), source and drain metal contacts (ITO), a hydrophobic insulator (amorphous fluoropolymer), a hydrophobic/hydrophilic grid (Kapton/SU-8), two fluids (electrolyte/oil), and top gate electrode (Au wire). The I-V characteristics and transconductance of the liquiFET are measured and the electrostatic field distribution inside the device is simulated.