Drive Current Enhancement in Silicon-on-Quartz MOSFETs

We proposed the advantages of MOSFETs fabricated on silicon-on-quartz (SOQ) wafers over MOSFETs on silicon-on-insulator (SOI) wafers. We demonstrated by device simulation that ionized acceptors under a buried oxide (BOX) layer are eliminated in an SOI MOSFET with a BOX layer that is thick enough in an SOQ MOSFET, and carriers in the channel are induced more effectively by the gate electric field in SOQ MOSFETs than in SOI MOSFETs. Additionally, we confirmed experimentally the enhancement of induced carriers and its resultant improvement of the subthreshold characteristics and transconductance characteristics in SOQ MOSFETs.