On-chip 3-D technology independent model for millimeter-wave transmission lines with bend in BiCMOS technologies

In this paper, an equation based process technology independent model of transmission line with bend is discussed. The model is generated based on existed single transmission line model using equations calculating the effective length of the bend discontinuity area. The model is compared with EM simulation; existing bend model generated with curve-fitted method and measured results of fabricated meander line. The meander line is realized with the Back End of Line (BEOL) wiring and the bend is enabled as a library device of a 0.13 μm SiGe BiCMOS process design kit. This bend device has a scalable layout pattern and a schematic symbol, which allows users to choose bend with different dimensions and metal stacks. In addition, the model can be migrated with other process technologies with different metal options. Very good match have been achieved among model, EM simulation and measurements for different process technologies and metal stacks.