Preparation of Iron Films by Dual Ion Beam Sputtering and Their Soft Magnetic Properties

The causes of differences in 4πM
_s
and H
_c
values for iron thin films grown under the same conditions were studied. It was found that H
_c
reaches a minimum and 4πM
_s
reaches a maximum when the radiation ion acceleration voltage is in the range 140 to 150 V. But the differences in values of H
_c
and 4πM
_s
seem to be due to impurities like carbon. The presence of wide peaks (thought to be Fe (b.c.c) (200) plane) in the x-ray diffraction diagrams for samples with comparatively high 4μM
_s
values suggests that the long-distance ordering improvement shown in the x-ray diffraction diagrams relates to the increase in 4μM
_s
values.