Charged Wall Behavior Observed by Bubble Run-Out Method

A new potential well measurement method, utilizing bubble run-out phenomena, is discussed, with emphasis on its application in observing charged wall behavior, as well as in measuring the potential well depth itself. The method is applied to bubbles in ion implanted propagation patterns on 1 μm bubble garnet films with different magnetostriction constants. Bubble run-out directions are found to be reflected by the strength of stress relaxation-induced magnetic anisotropies along ion-implantation pattern edges. The charged wall length and its stray field distribution were also estimated using this method. It is concluded that this method is one of the most useful tools available for operation error mode analysis in ion-implanted bubble device development.