Faraday/Ion Mass Spectroscopy Dosimeter for Plasma Immersion Ion Implantation/Plasma Doping Processes of Semiconductor Manufacturing

A new method and apparatus called Faraday/ion mass spectroscopy (IMS) dosimeter system is developed and can be used to determine the implanted impurity dose and profile for any molecular or multispecies-based plasma immersion ion implantation (PIII)/plasma doping (PLAD) processes. Good agreement between the boron doses measured by this method and those measured by SIMS has been demonstrated. Because of its direct, real-time, in situ, and close-loop control manner, this method shows a good controllability and repeatability for the PIII/PLAD processes.