The 2nd Generation divided RESURF structure for High Voltage ICs

The 2nd generation divided RESURF structure has been developed by applying a P- substrate-on-P- epitaxial layer and micro- N+ buried layer (micro-NB) provided at the edge region of the N+ buried layer (NB). The micro-NB reduces the electric field around its own area, and it improves the breakdown voltage with no additional area. Beside, the 2nd generation divided RESURF structure has no effect on the breakdown voltage, because the divide RESURF structure is designed that the depletion layer enough reduces its own electric field.