A spin dependent recombination study of radiation induced defects at and near the Si/SiO/sub 2/ interface

A novel electron spin resonance technique, spin-dependent recombination (SDR), permits extremely rapid, high-signal-to-noise-ratio electron spin resonance (ESR) measurements of electrically active radiation damage centers in (relatively) hard MOS transistors in integrated circuits. SDR was used to observe the radiation-induced buildup of P/sub bo/ and E' centers at relatively low concentration in individual MOSFETs in integrated circuits with