High Endurance Multi-gate TiN Nanocrystal Memory Devices with High-k Blocking Dielectric and High Work Function Gate Electrode

In this work, n-channel Multi-gate FET TiN nanocrystal memory using p
⁺
poly-Si gate and Al
₂
O
₃
high-k blocking dielectric is demonstrated with good transistor characteristics and moderate high memory window for the first time. High endurance of only 3% window narrowing after 10
⁴
P/E cycles is demonstrated. The phenomenon and mechanism of erasing-first induced retention degradation are also reported.