A 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technology

An Electrostatic Discharge (ESD) protected Low-Noise Amplifier (LNA) for the 2.4GHz ISM band designed in a 0.13μm standard RFCMOS technology is presented. The amplifier, including packaging effects, achieves 16.8dB power gain, reflexion coeffcients S
11
, S
22
≪ −30dB over the 2.4GHz ISM band, a peak noise figure of 1.8 dB, and an IIP
3
of 1dBm, while drawing less than 4.5mA dc biasing current from the 1.2V power supply. Further, the LNA withstands a Human Body Model (HBM) ESD stress up to ±2.0kV, by means of the additional custom protection circuitry.