A Low Power V-band Low Noise Amplifier Using 0.13-μm CMOS Technology

In this paper, a low power V-band low-noise amplifier (LNA) using standard 0.13-um CMOS technology is proposed and analyzed. In the proposed LNA, three-stage common-source topology is used instead of cascode configuration to improve the noise performance. The measured LNA gain is 10.9 dB and the simulated noise figure of the proposed LNA is 5.1 dB at 67.8 GHz. Furthermore, the input and output return losses are lower than -12 dB at center frequency. Moreover, the 3-dB bandwidth covers from 65 GHz to 72 GHz which is suitable for wideband applications. Finally, the proposed LNA consumes only 5.4 mW from a 0.8-V power supply.