Investigation of Thermal Noise in UTB GOI and SOI Devices

The thermal-noise performances of ultrathin-body silicon-on-insulator (SOI) and germanium-on-insulator (GOI) devices are investigated and compared through simulation in this paper. The figures-of-merit for noise characteristics are considered in terms of the minimum of noise figure (NF
_min
)and equivalent noise resistance (R
_n
). GOI devices exhibit better noise performance over SOI counterparts. The reduction in the supply voltage brings more distinct improvements of the noise performance of GOI devices. The dependence of noise parameters on the film thickness and spacer length is also analyzed. The results demonstrate that GOI devices are more suitable for RF and low-noise applications.