SONOS-Type Flash Memory Cell With Metal $/\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{SiN}/\hbox{Si}_{3}\hbox{N}_{4}/\hbox{Si}$ Structure for Low-Voltage High-Speed Program/Erase Operation

High-quality Al
₂
O
₃
and Si
₃
N
₄
dielectrics synthesized in a molecular/atomic deposition system were developed and adopted as blocking oxide and tunnel dielectric, respectively in a SONOS-type NAND flash memory cell. In particular, the use of trap-free Si
₃
N
₄
as tunnel dielectric enables low-voltage erase operation due to its low barrier height for holes, and the relatively high-k value of Al
₂
O
₃
enhances the low-voltage and high-speed program/erase (P/E) operations. We fabricated and investigated NAND flash memory cells with metal/Al
₂
O
₃
/SiN/Si
₃
N
₄
/Si structure. The fabricated cell shows 3.8-V memory window with P/E conditions of +15 V for 100 mus and -10 V for 10 ms. It also shows good endurance up to 10 000 cycles and more than 1.5-V memory window after ten years.