Development of Plasma-Damage Free Neutral Beam Sputtering System; High Performance Indium Tin Oxide Films at Room Temperature with Application to Top Emmission OLED

A neutral beam system has been developed to produce hyperthermal neutral beams(HNB) sputtering system. ITO thin film with good performance has been developed by the HNB sputtering system at the room temperature. The optimized conditions as neutral beam acceleration bias of -30V and In & Sn composition ratio of 99:01 gives lower resistivity as 4.22×10
^-4
Ω-cm and higher transmittance over 90% near wavelength of 550 nm. The room temperature-processed ITO films applied top electrode of OLED without plasma related damage.