Computer Simulation of Electron Scattering by Heavy Atoms Added into Resist for Dry Etch Resistance Enhancement

In order to realize VLSIs, a combination of fine line lithographies, such as e-beam or X-ray, and dry etching is important. For high speed exposure, a Sensitive resist is necessary. However, as a general rule, the more sensitive the resist, the weaker it is withstanding in dry etching. Recently, it has been reported that the dry etching rate is reversely proportional to carbon contents in resists(l).