Application of a New MRS-type Negative Resist MRL to 365 nm Reduction Exposure System

A new MRS-type negative photoresist, MRL (Micro Resist for Longer wavelengths), was prepared for application to a UV reduction projection exposure system at 365 nm, aiming at higher alignment accuracy. This paper reports on optimization of the resist composition for the 365 nm exposure system and on results of fine pattern delineation through this approach.