CMOS Isolation Using Selective Epitaxial Regrowth

The various problems associated with present techniques for MOS device isolation have been reviewed by Oldham1. Alternate techniques have been suggested by Rung et. al.2 and Endo et. a13. One of these techniques uses a deeply etched trench2 for device isolation, while the second alternative uses selective epitaxial silicon regrowth3 to obtain single crystal silicon areas separated by a thick dielectric.