High Speed CMOS Devices Fabricated on Laser-Recrystallized Polycrystalline Silicon Island

Recently, silicon on insulating (SOI) films fabricated by various recrystallization methods have been significantly improved in crystal quality [1-3]. However, performance of MOS devices fabricated on them was still inferior to that of the devices on bulk silicon due to their longer channel lengths of 5 pm level and/or lower carrier mobility. This is mainly because grain boundaries which exsist on SOI after recrystallization cause fast diffusion of source and drain dopants, and prevent realizing the short channel devices.