High Pressure Oxidation for Thin Gate Insulator Process

High pressure oxidation (HPO) is a new technique for VLSI processing. The advantages of HPO have been reported on the high growth rate of thick oxide, which results in the improvement of oxidation time and temperature, and the remarkable reduction of OSF and impurity redistribution (1) - (4). For VLSI having a thinner insulator film and a shallow junction depth, lower temperature processing is necessary. In this paper, it will be reported that the high pressure low temperature oxidation technique is able to be applied to a thin gate insulator process.