Deep UV Projection Lithography Using Novel Negative Resist

One to one projection printing has made it possible to use photomasks and wafers without generating defects on them. Thus, it is superior to contact printing. Also, its throughput is better than reduction projection printing. However, conventional 1:1 projection printing with a positive resist lacks in enough resolution and is not capable of forming accurate patterns of under 2 pm line width. It is of primal importance for a prospective lithography to accurately delineate patterns below 2 pm line widths, which is very close to the resolution limit of photolithography. This paper reports successful application of a negative deep uv resist MRS to 1:1 projection printing.