Improvement of Dielectric Strength of Tisix-Polycide-Gate System by Using Rapidly Nitrided Oxides

Silicide gates are expected for a plication to highspeed VLSI's. TiSix /thin poly-Si structures were chosen for this study to realize low-resistive gates. For the purpose, the poly-Si sublayer should be as thin as possible. For 0.5μm CMOS technology, gate oxides are required to be as thin as 10 nm.