In-Situ MOS Gate Engineering in a Novel Rapid Thermal/Plasma Multiprocessing Reactor

Low temperatures and short times are essential requirements of future VLSI processing and the use of plasma in conjunction with single-wafer lamp heating is a ma4or step to realize this goal. In-situ multiprocessing reduces contamination and enhances yield. Reproducible growth of thin oxides in hot-wall furnaces is difficult due to long transient times and constant furnace temperatures. Since furnaces are not designed for single-wafer processing, no extensive in-situ real-time measurements can be performed. RTP of Si in 02 and NH3 ambients is an attractive technique for the growth of silicon nitride, silicon dioxide, nitrided oxides, oxidized nitrides, and application-specific insulators (1].