Two-Dimensional Simulation of Glass Reflow and Silicon Oxidation

A general-purpose program for the two-dimensional (2D) simulation of processes with moving boundaries has been written. The program is capable of simulating the growth or deformation of regions for problems with almost any arbitrarily shaped initial geometry. In this paper. we describe the application to the problems of glass reflow as well as local oxidation. Aside from predicting final profiles. it can also calculate the stress generated within the media and at the interfaces. The latter capability is particularly important for optimizing oxidation technology while avoiding defects in the silicon substrate caused by high stress levels.