Technology for a 250V Monolithic Complementary MOSFFT LSJ with N+ Buried-Layer Protected CMOS Logic

High-voltage LSIs with compatible logic are strongly required for support of flat panel displays such as PDP and EL panels. For these LSIs, isolation type IC structure [1]1 that ca realize push-pull circuits is more appropriate than that of open drain type[2] because of low power consumption and high speed operation. In this paper, a new LSI design using pn junction isolated high-voltage complementary MOSFET and n+ buried-layer protected CMOS logic strengthen against latch-up is proposed. With this design, a push-pull driver LSI with up to 250V of output voltage in contrast to 150V for that of a conventional one [1], can be realized.