A 10-Bit Linear Image Sensor Fabricated in Double Active Layers

In recent years, silicon on insulator (SOI) technology has progressed so much, and has been successfully applied to not only planar two dimensional SOI devices[l] but also to more complicated three dimensional (3-D) devices[2]. We have already reported the vertically integrated MOS device in double active layers by the improved selective laser recrystallization technique, and demonstrated their performance in order to assess the feasibility of 3-D LSI's[2].