A New Method to Extract Bulk Carrier Mobility in Germanium-on-Insulator

A new method is presented to extract bulk carrier mobility of germanium-on-insulator (GeOI) films based on the data from the depletion mode of four-point probe pseudo-MOSFET measurement. Analytical models of the conductance in depletion region and related parameter extraction procedures are presented. This method is validated with both GeOI and silicon-on-insulator substrates prepared by layer transfer.