Calculation of mobility using Monte Carlo method in a doped semiconducting single wall carbon nanotubes

The mobility of semiconducting single wall carbon nanotube in its intrinsic as well as doped state has been evaluated by Monte Carlo simulation approach. The role of electronic bandstructure, electron-phonon interaction, electron-impurity scattering and quantum transport are taken into account during simulation. The mobility for our model is studied at different temperature levels which implicitly suggest power law dependence of mobility. The simulation results are in agreement with available experimental data.