Scaling and Optimization of MOS Optical Modulators in Nanometer SOI Waveguides

In this paper, a very accurate model of optical modulators in silicon-on-insulator technology is developed and validated using experimental results reported in literature. Using an optimized nanometer MOS structure, a significant bandwidth increase (around 45%), length decrease (around four times), and power consumption reduction (three times) with respect to the state-of-the-art have been obtained.